Technical parameters/dissipated power: 0.15 W
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 9 dB
Technical parameters/minimum current amplification factor (hFE): 40 @7mA, 3V
Technical parameters/rated power (Max): 150 mW
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-323
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 功能相似 | SOT-323 |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
||
2SC4226
|
NEC | 功能相似 | SC-70 |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
||
2SC4226-T1
|
Renesas Electronics | 完全替代 |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
|||
|
|
Renesas Electronics | 完全替代 | Mini-Mold |
Trans RF BJT NPN 12V 0.1A 3Pin Super Mini-Mold
|
||
2SC4226-T1-A
|
California Eastern Laboratories | 完全替代 | SOT-323 |
Trans RF BJT NPN 12V 0.1A 3Pin Super Mini-Mold
|
||
NE85630
|
Renesas Electronics | 完全替代 | SOT-323 |
Trans RF BJT NPN 12V 0.1A 3Pin SOT-323
|
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