Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
Physical parameters/materials: Silicon
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC4226-T1
|
Renesas Electronics | 完全替代 |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
|||
NE85630
|
Renesas Electronics | 功能相似 | SOT-323 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
||
|
|
Renesas Electronics | 功能相似 | 3 |
Transistor
|
||
NE85630-T1-A
|
NEC | 功能相似 | SOT-323 |
Transistor
|
||
NE85630-T1-A
|
California Eastern Laboratories | 功能相似 | SOT-323 |
Transistor
|
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