Technical parameters/dissipated power (Max): 150 mW
Package parameters/number of pins: 3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Renesas Electronics | 功能相似 | SOT-323 |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
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2SC4226
|
NEC | 功能相似 | SC-70 |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
||
|
|
Renesas Electronics | 完全替代 | Mini-Mold |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
||
2SC4226-T1-A
|
California Eastern Laboratories | 完全替代 | SOT-323 |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
||
NE85630
|
Renesas Electronics | 完全替代 | SOT-323 |
Trans RF BJT NPN 12V 0.1A 3Pin SOT-323
|
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