Encapsulation parameters/Encapsulation: | SC-70 |
|
Dimensions/Packaging: | SC-70 |
|
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): | 20V |
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Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): | 12V |
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Other/collector continuous output current ICCollector Current (IC): | 100mA/0.1A |
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Other/Cut off Frequency fTTransmission Frequency (fT): | 4.5Ghz |
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Other/DC current gain hFEDC Current Gain (hFE): | 70~140 |
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Other/dissipated power PcPower Dissipation: | 150mW/0.15W |
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Other/Specification PDF: | __ |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC4226-T1
|
Renesas Electronics | 功能相似 |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
|||
|
|
Renesas Electronics | 功能相似 | Mini-Mold |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
||
2SC4226-T1-A
|
California Eastern Laboratories | 功能相似 | SOT-323 |
NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
|
||
NE85630
|
Renesas Electronics | 功能相似 | SOT-323 |
Trans RF BJT NPN 12V 0.1A 3Pin SOT-323
|
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