Technical parameters/rated voltage (DC): -32.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 0.1A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Kexin | 功能相似 |
PNP通用放大器 PNP General Purpose Amplifier
|
|||
BCW30
|
NXP | 功能相似 | SOT-23 |
PNP通用放大器 PNP General Purpose Amplifier
|
||
BCW30,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP BCW30,215 单晶体管 双极, 通用, PNP, -32 V, 100 MHz, 250 mW, -100 mA, 150 hFE
|
||
BCW30,235
|
Nexperia | 功能相似 | SOT-23-3 |
TO-236AB PNP 32V 0.1A
|
||
BCW30LT1G
|
ON Semiconductor | 完全替代 | SOT-23-3 |
ON SEMICONDUCTOR BCW30LT1G 单晶体管 双极, PNP, -32 V, 225 mW, -100 mA, 215 hFE
|
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