Technical parameters/rated voltage (DC): -32.0 V
Technical parameters/rated current: -100 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 225 mW
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 215 @2mA, 5V
Technical parameters/rated power (Max): 225 mW
Technical parameters/DC current gain (hFE): 215
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW30@215
|
NXP | 类似代替 | SOT-23-3 |
BCW30@215
|
||
BCW30LT1
|
Leshan Radio | 完全替代 |
通用晶体管( PNP硅) General Purpose Transistors(PNP Silicon)
|
|||
BCW30LT1
|
ON Semiconductor | 完全替代 | SOT-23 |
通用晶体管( PNP硅) General Purpose Transistors(PNP Silicon)
|
||
SBCW30LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
SOT-23 PNP 32V 0.1A
|
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