Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/minimum current amplification factor (hFE): 215
Technical parameters/DC current gain (hFE): 150
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 0.25 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC860C
|
NXP | 类似代替 | SOT-23 |
NXP BC860C 单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE
|
||
BC860C
|
Kexin | 类似代替 |
NXP BC860C 单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE
|
|||
BCW30LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCW30LT1G 单晶体管 双极, PNP, -32 V, 225 mW, -100 mA, 215 hFE
|
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