Technical parameters/rated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 2000 @500mA, 10V
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP51,115
|
NXP | 功能相似 | TO-261-4 |
复合晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
BSP51,115
|
Nexperia | 功能相似 | TO-261-4 |
复合晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
BSP52,115
|
NXP | 功能相似 | TO-261-4 |
NXP BSP52,115 单晶体管 双极, NPN, 80 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
|
||
BSP52,115
|
Nexperia | 功能相似 | TO-261-4 |
NXP BSP52,115 单晶体管 双极, NPN, 80 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
|
||
BSP52T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BSP52T1G 单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
|
||
BSP52T3G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BSP52T3G 达林顿晶体管, NPN, 80V, SOT-223
|
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