Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 350 mW
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 完全替代 | TO-92 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
||
BC237B
|
Freescale | 完全替代 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
|||
|
|
Semtech Corporation | 完全替代 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
|||
BC237B
|
Philips | 完全替代 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
|||
BC237B
|
ON Semiconductor | 完全替代 | TO-92 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
||
BC237B
|
Microsemi | 完全替代 | TO-92 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
||
BC237BZL1
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
||
BC237BZL1G
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
||
ZTX651
|
Zetex | 功能相似 | TO-92-3 |
ZTX651 系列 NPN 2 A 60 V 硅 平面 中等功率 晶体管 - TO-92-3
|
||
ZTX651
|
Diodes | 功能相似 | TO-92-3 |
ZTX651 系列 NPN 2 A 60 V 硅 平面 中等功率 晶体管 - TO-92-3
|
||
ZTX651STZ
|
Diodes | 功能相似 | E-Line-3 |
ZTX651STZ 编带
|
||
ZTX651STZ
|
Diodes Zetex | 功能相似 | TO-92-3 |
ZTX651STZ 编带
|
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