Technical parameters/rated voltage (DC): | 45.0 V |
|
Technical parameters/rated current: | 100 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 45 V |
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Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 200 @2mA, 5V |
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Technical parameters/rated power (Max): | 350 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 完全替代 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
|||
BC237BRL1
|
ON Semiconductor | 完全替代 | TO-92-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
||
BC237BZL1
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
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