Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 完全替代 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
|||
BC237BRL1
|
ON Semiconductor | 完全替代 | TO-92-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
||
BC237BZL1
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
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