Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 100 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC237A
|
Freescale | 类似代替 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC237A
|
ON Semiconductor | 类似代替 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
|
|
Motorola | 类似代替 | TO-92 |
MULTICOMP BC237B 单晶体管 双极, NPN, 45 V, 200 MHz, 350 mW, 100 mA, 290 hFE
|
||
BC237B
|
Freescale | 类似代替 |
MULTICOMP BC237B 单晶体管 双极, NPN, 45 V, 200 MHz, 350 mW, 100 mA, 290 hFE
|
|||
|
|
Semtech Corporation | 类似代替 |
MULTICOMP BC237B 单晶体管 双极, NPN, 45 V, 200 MHz, 350 mW, 100 mA, 290 hFE
|
|||
BC237B
|
Philips | 类似代替 |
MULTICOMP BC237B 单晶体管 双极, NPN, 45 V, 200 MHz, 350 mW, 100 mA, 290 hFE
|
|||
BC237B
|
ON Semiconductor | 类似代替 | TO-92 |
MULTICOMP BC237B 单晶体管 双极, NPN, 45 V, 200 MHz, 350 mW, 100 mA, 290 hFE
|
||
BC237B
|
Microsemi | 类似代替 | TO-92 |
MULTICOMP BC237B 单晶体管 双极, NPN, 45 V, 200 MHz, 350 mW, 100 mA, 290 hFE
|
||
|
|
Motorola | 完全替代 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
|||
BC237BRL1
|
ON Semiconductor | 完全替代 | TO-92-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
||
ZTX651
|
Zetex | 功能相似 | TO-92-3 |
ZTX651 系列 NPN 2 A 60 V 硅 平面 中等功率 晶体管 - TO-92-3
|
||
ZTX651
|
Diodes | 功能相似 | TO-92-3 |
ZTX651 系列 NPN 2 A 60 V 硅 平面 中等功率 晶体管 - TO-92-3
|
||
ZTX651STZ
|
Diodes | 功能相似 | E-Line-3 |
ZTX651STZ 编带
|
||
ZTX651STZ
|
Diodes Zetex | 功能相似 | TO-92-3 |
ZTX651STZ 编带
|
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