Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 5.00 A
Technical parameters/drain source voltage (Vds): 1.00 kV
Technical parameters/Continuous drain current (Ids): 5.00 A
Technical parameters/rise time: 18.0 ns
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFPG30
|
International Rectifier | 功能相似 | TO-247 |
MOSFET N-CH 1000V 3.1A TO-247AC
|
||
IRFPG30
|
Vishay Siliconix | 功能相似 | TO-247-3 |
MOSFET N-CH 1000V 3.1A TO-247AC
|
||
IRFPG30
|
VISHAY | 功能相似 | TO-247 |
MOSFET N-CH 1000V 3.1A TO-247AC
|
||
IRFPG30
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 1000V 3.1A TO-247AC
|
|||
IRFPG30PBF
|
VISHAY | 功能相似 | TO-247-3 |
MOSFET N-CH 1000V 3.1A TO-247AC
|
||
|
|
Infineon | 功能相似 | TO-247 |
MOSFET N-CH 1000V 3.1A TO-247AC
|
||
IRFPG30PBF
|
International Rectifier | 功能相似 | TO-247 |
MOSFET N-CH 1000V 3.1A TO-247AC
|
||
IRFPG30PBF
|
LiteOn | 功能相似 | TO-247-3 |
MOSFET N-CH 1000V 3.1A TO-247AC
|
||
IRFPG40
|
Vishay Semiconductor | 功能相似 | TO-247-3 |
4.3A , 1000V , 3.500 Ohm的N通道功率MOSFET 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET
|
||
IRFPG40
|
International Rectifier | 功能相似 |
4.3A , 1000V , 3.500 Ohm的N通道功率MOSFET 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET
|
|||
IRFPG40
|
Vishay Siliconix | 功能相似 | TO-247-3 |
4.3A , 1000V , 3.500 Ohm的N通道功率MOSFET 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET
|
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