Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 5 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 125 W |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 1000 V |
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Technical parameters/Continuous drain current (Ids): | 3.10 A |
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Technical parameters/rise time: | 24 ns |
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Technical parameters/Input capacitance (Ciss): | 980pF @25V(Vds) |
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Technical parameters/rated power (Max): | 125 W |
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Technical parameters/descent time: | 29 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 125 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-247-3 |
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Dimensions/Length: | 15.87 mm |
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Dimensions/Width: | 5.31 mm |
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Dimensions/Height: | 20.7 mm |
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Dimensions/Packaging: | TO-247-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Minimum Packaging: | 500 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH12N100
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH12N100 功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V
|
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