Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 4.30 A
Technical parameters/drain source resistance: 3.50 Ω (max)
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/leakage source breakdown voltage: 1.00kV (min)
Technical parameters/Continuous drain current (Ids): 4.30 A
Technical parameters/rise time: 33.0 ns
Encapsulation parameters/installation method: Through Hole
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFPG40PBF
|
VISHAY | 完全替代 | TO-247-3 |
MOSFET N-CH 1000V 4.3A TO-247AC
|
||
IRFPG40PBF
|
Vishay Semiconductor | 完全替代 | TO-247-3 |
MOSFET N-CH 1000V 4.3A TO-247AC
|
||
IRFPG40PBF
|
International Rectifier | 完全替代 |
MOSFET N-CH 1000V 4.3A TO-247AC
|
|||
IRFPG40PBF
|
Vishay Siliconix | 完全替代 | TO-247-3 |
MOSFET N-CH 1000V 4.3A TO-247AC
|
||
IRFPG40PBF
|
Vishay Precision Group | 完全替代 | TO-247 |
MOSFET N-CH 1000V 4.3A TO-247AC
|
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