Technical parameters/dissipated power: 150W (Tc)
Technical parameters/Input capacitance (Ciss): 1600pF @25V(Vds)
Technical parameters/dissipated power (Max): 150W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.87 mm
External dimensions/width: 5.31 mm
External dimensions/height: 20.82 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFPG40
|
Vishay Semiconductor | 完全替代 | TO-247-3 |
MOSFET N-CH 1000V 4.3A TO-247AC
|
||
IRFPG40
|
International Rectifier | 完全替代 |
MOSFET N-CH 1000V 4.3A TO-247AC
|
|||
IRFPG40
|
Vishay Siliconix | 完全替代 | TO-247-3 |
MOSFET N-CH 1000V 4.3A TO-247AC
|
||
IRFPG40PBF
|
VISHAY | 类似代替 | TO-247-3 |
N 通道 MOSFET,600V 至 1000V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRFPG40PBF
|
Vishay Semiconductor | 类似代替 | TO-247-3 |
N 通道 MOSFET,600V 至 1000V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRFPG40PBF
|
International Rectifier | 类似代替 |
N 通道 MOSFET,600V 至 1000V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
|||
IRFPG40PBF
|
Vishay Siliconix | 类似代替 | TO-247-3 |
N 通道 MOSFET,600V 至 1000V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRFPG40PBF
|
Vishay Precision Group | 类似代替 | TO-247 |
N 通道 MOSFET,600V 至 1000V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
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