Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 3.10 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/leakage source breakdown voltage: 1.00 kV
Technical parameters/Continuous drain current (Ids): 3.10 A
Technical parameters/rise time: 24.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH12N100
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH12N100 功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V
|
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