Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/forward voltage: 1.00 V
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250 W
Technical parameters/leakage source breakdown voltage: 60.0V (min)
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 95.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTE2387
|
NTE Electronics | 功能相似 | TO-220 |
NTE ELECTRONICS NTE2387. 场效应管, MOSFET, N沟道, 800V, 4A, TO-220
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SPP20N60S5
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Infineon | 功能相似 | TO-220-3 |
Infineon CoolMOS™S5 功率 MOSFET 系列 ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
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STP10P6F6
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ST Microelectronics | 功能相似 | TO-220-3 |
P沟道60 V ， 0.15 I© （典型值） ， 10 A STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET采用DPAK和TO- 220封装 P-channel 60 V, 0.15 Ω typ., 10 A STripFET⢠VI DeepGATE⢠Power MOSFET in DPAK and TO-220 packages
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