Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1.27W (Ta), 33.3W (Tc)
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/Continuous drain current (Ids): 10.5A
Technical parameters/Input capacitance (Ciss): 827pF @12V(Vds)
Technical parameters/rated power (Max): 1.27 W
Technical parameters/dissipated power (Max): 1.27W (Ta), 33.3W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | TO-252 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDD6690A, 46 A, Vds=30 V, 3引脚 DPAK (TO-252)封装
|
||
FDD6690A
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDD6690A, 46 A, Vds=30 V, 3引脚 DPAK (TO-252)封装
|
||
FDD6690A
|
Fairchild | 功能相似 | TO-252-3 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDD6690A, 46 A, Vds=30 V, 3引脚 DPAK (TO-252)封装
|
||
NTD60N02R
|
ON Semiconductor | 类似代替 | TO-252-3 |
60A,24V功率MOSFET
|
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