Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 62.0 A
Technical parameters/drain source resistance: 8.40 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.25W (Ta), 58W (Tc)
Technical parameters/input capacitance: 1.33 nF
Technical parameters/gate charge: 14.0 nC
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/leakage source breakdown voltage: 25.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 62.0 A
Technical parameters/Input capacitance (Ciss): 1330pF @20V(Vds)
Technical parameters/dissipated power (Max): 1.25W (Ta), 58W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD50N03RT4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
45A,25V功率MOSFET
|
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