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Model NTD50N03RT4G
Description 45A,25VPower MOSFET
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.65  yuan 0.65yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6025) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

25.0 V

 

Technical parameters/rated current:

45.0 A

 

Technical parameters/drain source resistance:

19.0 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.5W (Ta), 50W (Tc)

 

Technical parameters/Input capacitance:

750 pF

 

Technical parameters/gate charge:

10.0 nC

 

Technical parameters/drain source voltage (Vds):

25 V

 

Technical parameters/Leakage source breakdown voltage:

25.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

9.20 A

 

Technical parameters/Input capacitance (Ciss):

750pF @12V(Vds)

 

Technical parameters/rated power (Max):

1.5 W

 

Technical parameters/dissipated power (Max):

1.5W (Ta), 50W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD60N02R NTD60N02R ON Semiconductor 类似代替 TO-252-3
60A,24V功率MOSFET
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