Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 3 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 6.25 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 90 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Other/Product Lifecycle: Unknown
Other/Manufacturing Applications: Power Management, Motor Drive and Control, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6660
|
Vishay Siliconix | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
2N6660
|
Solid State | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
|
|
NJS | 功能相似 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
|||
|
|
Suptertex | 功能相似 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
|||
2N6661
|
Solid State Devices | 功能相似 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
|||
|
|
Vishay Semiconductor | 功能相似 | TO-205 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
2N6661
|
Solid State | 功能相似 | TO-205 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
2N6661
|
Supertex | 功能相似 | TO-39 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
2N6661
|
Vishay Intertechnology | 功能相似 | TO-39-3 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
2N6661
|
NJS | 功能相似 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
|||
2N6661
|
Semelab | 功能相似 | TO-39 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
2N6661-E3
|
VISHAY | 功能相似 | TO-205 |
MOSFET N-CH 90V 0.86A TO-205
|
||
2N6661-E3
|
Vishay Semiconductor | 功能相似 | TO-205-3 |
MOSFET N-CH 90V 0.86A TO-205
|
||
2N6661-E3
|
Vishay Dale | 功能相似 |
MOSFET N-CH 90V 0.86A TO-205
|
|||
2N7000
|
Diodes | 功能相似 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
ST Microelectronics | 功能相似 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
TI | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Suptertex | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Supertex | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
NTE Electronics | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
Calogic | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
InterFET | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Major Brands | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Diotec Semiconductor | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
UTC | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
National Semiconductor | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
ON Semiconductor | 功能相似 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
BS170
|
GE | 功能相似 |
小信号N沟道TO-92-3封装场效应管
|
|||
BS170
|
ON Semiconductor | 功能相似 | TO-226-3 |
小信号N沟道TO-92-3封装场效应管
|
||
BS170
|
Major Brands | 功能相似 | TO-92 |
小信号N沟道TO-92-3封装场效应管
|
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