Technical parameters/drain source resistance: 3 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 725 mW
Technical parameters/threshold voltage: 1.7 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/Continuous drain current (Ids): 1.10 A
Technical parameters/Input capacitance (Ciss): 50pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 725mW (Ta), 6.25W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6660
|
Vishay Siliconix | 功能相似 | TO-205 |
Trans MOSFET N-CH 60V 0.41A 3Pin TO-39
|
||
2N6660
|
Solid State | 功能相似 | TO-205 |
Trans MOSFET N-CH 60V 0.41A 3Pin TO-39
|
||
|
|
NJS | 功能相似 |
Trans MOSFET N-CH 60V 0.41A 3Pin TO-39
|
|||
2N6660JTVP02
|
Vishay Siliconix | 功能相似 | TO-205 |
Trans MOSFET N-CH 60V 0.99A 3Pin TO-205AD
|
||
2N6660JTVP02
|
Vishay Semiconductor | 功能相似 |
Trans MOSFET N-CH 60V 0.99A 3Pin TO-205AD
|
|||
2N6660JTXL02
|
Vishay Siliconix | 功能相似 | TO-205 |
MOSFET N-CH 60V 0.99A TO-205
|
||
2N6660JTXL02
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 60V 0.99A TO-205
|
|||
2N6660JTXL02
|
VISHAY | 功能相似 | TO-205 |
MOSFET N-CH 60V 0.99A TO-205
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review