Technical parameters/dissipated power: 725mW (Ta), 6.25W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 50pF @25V(Vds)
Technical parameters/rated power (Max): 725 mW
Technical parameters/dissipated power (Max): 725mW (Ta), 6.25W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6660JTVP02
|
Vishay Siliconix | 完全替代 | TO-205 |
Trans MOSFET N-CH 60V 0.99A 3Pin TO-205AD
|
||
2N6660JTVP02
|
Vishay Semiconductor | 完全替代 |
Trans MOSFET N-CH 60V 0.99A 3Pin TO-205AD
|
|||
2N6660JTX02
|
Vishay Siliconix | 完全替代 | TO-205 |
MOSFET N-CH 60V 0.99A TO-205
|
||
2N6660JTXL02
|
Vishay Siliconix | 完全替代 | TO-205 |
MOSFET N-CH 60V 0.99A TO-205
|
||
2N6660JTXL02
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 60V 0.99A TO-205
|
|||
2N6660JTXL02
|
VISHAY | 完全替代 | TO-205 |
MOSFET N-CH 60V 0.99A TO-205
|
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