Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 300 @100µA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5088BU
|
Fairchild | 类似代替 | TO-226-3 |
ON Semiconductor 2N5088BU , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装
|
||
2N5088TA
|
ON Semiconductor | 类似代替 | TO-92-3 |
ON Semiconductor 2N5088TA , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装
|
||
2N5088TA
|
Fairchild | 类似代替 | TO-92-3 |
ON Semiconductor 2N5088TA , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装
|
||
2N5088TAR
|
ON Semiconductor | 类似代替 | TO-92-3 |
ON Semiconductor 2N5088TAR , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装
|
||
2N5088TAR
|
Fairchild | 类似代替 | TO-92-3 |
ON Semiconductor 2N5088TAR , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装
|
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