Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 300 @100µA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5088TA
|
ON Semiconductor | 完全替代 | TO-92-3 |
ON Semiconductor 2N5088TA , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装
|
||
2N5088TA
|
Fairchild | 完全替代 | TO-92-3 |
ON Semiconductor 2N5088TA , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装
|
||
2N5088TAR
|
ON Semiconductor | 类似代替 | TO-92-3 |
NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N5088TAR
|
Fairchild | 类似代替 | TO-92-3 |
NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N5088TF
|
ON Semiconductor | 类似代替 | TO-92-3 |
Transistor, Bjt, Npn, 30V v(Br)Ceo, 50mA i(c), To-92
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review