2N5088TA In Stock|PDF|Datasheet|Price|Agent[2N5088TA Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

Model 2N5088TA

Description NPN Transistors, up to 30V, Fairchild Semiconductor # # Bipolar Transistors, Fairchild Semiconductor Bipolar Junction Transistor (BJT) board series provide complete solutions to meet various circuit application needs. Innovative packaging design is used to provide the smallest size, highest reliability, and maximum thermal performance.

Brand: Fairchild

Packaging TO-92-3

Delivery time

Packaging method Box

Standard packaging quantity 1

10+:

$ 8.7360

100+:

$ 8.2992

500+:

$ 8.0080

1000+:

$ 7.9934

2000+:

$ 7.9352

5000+:

$ 7.8624

7500+:

$ 7.8042

10000+:

$ 7.7750

Price	$ 8.7360	$ 8.2992	$ 8.0080	$ 7.9934	$ 7.9352
Start batch production	10+	100+	500+	1000+	2000+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(4963) Minimum order quantity(10)

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Specification parameters
PDF
Silk screen printing
Review and share the purchase （0 ）
Product inquiry (0)
Selection Manual
Adapter model (0)

Technical parameters/frequency: 50 MHz

Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 100 mA

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 625 mW

Technical parameters/collector breakdown voltage: 35.0 V

Technical parameters/breakdown voltage (collector emitter): 30 V

Technical parameters/maximum allowable collector current: 0.1A

Technical parameters/minimum current amplification factor (hFE): 300

Technical parameters/Maximum current amplification factor (hFE): 900

Technical parameters/rated power (Max): 625 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 625 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-92-3

External dimensions/length: 5.2 mm

External dimensions/width: 4.19 mm

External dimensions/height: 5.33 mm

External dimensions/packaging: TO-92-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Box

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
2N5088	Central Semiconductor	功能相似	TO-92-3	放大器晶体管 Amplifier Transistors	PDF
2N5088	Micro Electronics	功能相似		放大器晶体管 Amplifier Transistors	PDF
2N5088	Fairchild	功能相似	TO-92	放大器晶体管 Amplifier Transistors	PDF
2N5088	Major Brands	功能相似		放大器晶体管 Amplifier Transistors	PDF
2N5088	Continental Device	功能相似	TO-92	放大器晶体管 Amplifier Transistors	PDF
2N5088	UTC	功能相似	TO-92	放大器晶体管 Amplifier Transistors	PDF
2N5088	ON Semiconductor	功能相似	TO-226-3	放大器晶体管 Amplifier Transistors	PDF
2N5088	TI	功能相似		放大器晶体管 Amplifier Transistors
2N5088	Samsung	功能相似		放大器晶体管 Amplifier Transistors	PDF
2N5088BU	Fairchild	完全替代	TO-226-3	ON Semiconductor 2N5088BU , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装	PDF
2N5088TA	ON Semiconductor	类似代替	TO-92-3	NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。	PDF
2N5088TA	Fairchild	类似代替	TO-92-3	NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。	PDF
2N5088TAR	ON Semiconductor	完全替代	TO-92-3	ON Semiconductor 2N5088TAR , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装	PDF
2N5088TAR	Fairchild	完全替代	TO-92-3	ON Semiconductor 2N5088TAR , NPN 晶体管, 100 mA, Vce=30 V, HFE:300, 50 MHz, 3引脚 TO-92封装	PDF
2N5088TF	ON Semiconductor	类似代替	TO-92-3	Transistor, Bjt, Npn, 30V v(Br)Ceo, 50mA i(c), To-92	PDF