Technical parameters/frequency: | 50 MHz |
| ||||
Technical parameters/rated voltage (DC): | 30.0 V |
| ||||
Technical parameters/rated current: | 100 mA |
| ||||
Technical parameters/number of pins: | 3 |
| ||||
Technical parameters/polarity: | NPN |
| ||||
Technical parameters/dissipated power: | 625 mW |
| ||||
Technical parameters/collector breakdown voltage: | 35.0 V |
| ||||
Technical parameters/breakdown voltage (collector emitter): | 30 V |
| ||||
Technical parameters/Maximum allowable collector current: | 0.1A |
| ||||
Technical parameters/minimum current amplification factor (hFE): | 300 @100µA, 5V |
| ||||
Technical parameters/rated power (Max): | 625 mW |
| ||||
Technical parameters/DC current gain (hFE): | 300 |
| ||||
Technical parameters/operating temperature (Max): | 150 ℃ |
| ||||
Technical parameters/operating temperature (Min): | -55 ℃ |
| ||||
Technical parameters/dissipated power (Max): | 625 mW |
| ||||
Encapsulation parameters/installation method: | Through Hole |
| ||||
Package parameters/number of pins: | 3 |
| ||||
Encapsulation parameters/Encapsulation: | TO-226-3 |
| ||||
Dimensions/Length: | 5.2 mm |
| ||||
Dimensions/Width: | 4.19 mm |
| ||||
Dimensions/Height: | 5.33 mm |
| ||||
Dimensions/Packaging: | TO-226-3 |
| ||||
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
| ||||
Other/Product Lifecycle: | Active |
| ||||
Other/Packaging Methods: | Bulk |
| ||||
Compliant with standards/RoHS standards: | RoHS Compliant |
| ||||
Compliant with standards/lead standards: | Lead Free |
| ||||
Compliant with the REACH SVHC standard: | No SVHC |
| ||||
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5088
|
Central Semiconductor | 功能相似 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
||
|
|
Micro Electronics | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088
|
Fairchild | 功能相似 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
Major Brands | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088
|
Continental Device | 功能相似 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
UTC | 功能相似 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
ON Semiconductor | 功能相似 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
|
2N5088
|
TI | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
|
2N5088
|
Samsung | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088TA
|
ON Semiconductor | 类似代替 | TO-92-3 |
NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N5088TA
|
Fairchild | 类似代替 | TO-92-3 |
NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review