Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.7 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 550 mA
Technical parameters/Input capacitance (Ciss): 100pF @25V(Vds)
Technical parameters/rated power (Max): 1.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Communications & Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP122,115
|
NXP | 类似代替 | TO-261-4 |
N 通道 MOSFET,100V 及更高,Nexperia ### MOSFET 晶体管,NXP Semiconductors
|
||
BSP122,115
|
Nexperia | 类似代替 | TO-261-4 |
N 通道 MOSFET,100V 及更高,Nexperia ### MOSFET 晶体管,NXP Semiconductors
|
||
IRFM210B
|
Fairchild | 功能相似 | SOT-223 |
200V N沟道MOSFET 200V N-Channel MOSFET
|
||
STN1HNK60
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN1HNK60 功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
|
||
ZVN2110G
|
Vishay Semiconductor | 功能相似 | SOT-223 |
晶体管, MOSFET, N沟道, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
|
||
ZVN2110G
|
Diodes | 功能相似 | SOT-223 |
晶体管, MOSFET, N沟道, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
|
||
ZVN2110GTA
|
Diodes Zetex | 功能相似 | SOT-223 |
ZVN2110G 系列 100 V 4 Ohm N 沟道 增强模式 垂直 DMOS FET-SOT-223
|
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