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Model ZVN2110G
Description DIODES INC. ZVN2110G Transistor, MOSFET, N-channel, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-223
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
3.34  yuan 3.34yuan
5+:
$ 4.5131
25+:
$ 4.1788
50+:
$ 3.9447
100+:
$ 3.8445
500+:
$ 3.7776
2500+:
$ 3.6940
5000+:
$ 3.6606
10000+:
$ 3.6104
Quantity
5+
25+
50+
100+
500+
Price
$4.5131
$4.1788
$3.9447
$3.8445
$3.7776
Price $ 4.5131 $ 4.1788 $ 3.9447 $ 3.8445 $ 3.7776
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6328) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 4 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2 W

Technical parameters/threshold voltage: 2.4 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 500 mA

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-223

External dimensions/packaging: SOT-223

Other/Product Lifecycle: Active

Other/Packaging Methods: Cut Tape (CT)

Other/Manufacturing Applications: Industrial, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSP122,115 BSP122,115 NXP 功能相似 TO-261-4
NXP BSP122,115 晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
PDF
BSP122,115 BSP122,115 Nexperia 功能相似 TO-261-4
NXP BSP122,115 晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
PDF

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