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Model STN1HNK60
Description STMICROELECTRONICS STN1HNK60 功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
Product QR code
Brand: ST Microelectronics
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.82  yuan 0.82yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2958) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

400 mA

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

8 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.3 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/Continuous drain current (Ids):

500 mA

 

Technical parameters/rise time:

5 ns

 

Technical parameters/Input capacitance (Ciss):

156pF @25V(Vds)

 

Technical parameters/rated power (Max):

3.3 W

 

Technical parameters/descent time:

25 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3.3W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Length:

6.5 mm

 

Dimensions/Width:

3.5 mm

 

Dimensions/Height:

1.8 mm

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Lighting, Power Management,

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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BSP130,115 BSP130,115 NXP 功能相似 TO-261-4
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STQ1HNK60R-AP STQ1HNK60R-AP ST Microelectronics 功能相似 TO-92-3
STMICROELECTRONICS STQ1HNK60R-AP 功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 8 ohm, 10 V, 3 V
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