Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 8 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 500 mA
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 156pF @25V(Vds)
Technical parameters/rated power (Max): 3 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.95 mm
External dimensions/width: 3.94 mm
External dimensions/height: 4.95 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STN1HNK60
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN1HNK60 功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
|
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