Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 4 Ω
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 2.4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP122,115
|
NXP | 功能相似 | TO-261-4 |
NXP BSP122,115 晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
|
||
BSP122,115
|
Nexperia | 功能相似 | TO-261-4 |
NXP BSP122,115 晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
|
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