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Model DN2535N5-G
Description Supertex N Microchip's Supertex series N-channel depletion type DMOS FET transistors are suitable for applications that require high breakdown voltage, high input impedance, low input capacitance, and fast switching speed. ###Characteristics: High input impedance, low input capacitance, fast switching speed, low on resistance, no secondary breakdown, low input and output leakage. Typical applications: normally open switch, solid-state relay converter, linear amplifier, constant current source, power supply circuit, telecommunications, MOSFET transistor, Microchip
Product QR code
Brand: Microchip
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
9.32  yuan 9.32yuan
10+:
$ 11.1816
100+:
$ 10.6225
500+:
$ 10.2498
1000+:
$ 10.2312
2000+:
$ 10.1566
5000+:
$ 10.0634
7500+:
$ 9.9889
10000+:
$ 9.9516
Quantity
10+
100+
500+
1000+
2000+
Price
$11.1816
$10.6225
$10.2498
$10.2312
$10.1566
Price $ 11.1816 $ 10.6225 $ 10.2498 $ 10.2312 $ 10.1566
Start batch production 10+ 100+ 500+ 1000+ 2000+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6936) Minimum order quantity(10)
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Technical parameters/rated power: 15 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 17 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 15 W

Technical parameters/drain source voltage (Vds): 350 V

Technical parameters/Input capacitance (Ciss): 300pF @25V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 15W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
DN2535N3-G DN2535N3-G Microchip 功能相似 TO-226-3
MICROCHIP DN2535N3-G 晶体管, MOSFET, N沟道, 120 mA, 350 V, 17 ohm, 0 V
PDF
DN2535N3-G DN2535N3-G Suptertex 功能相似
MICROCHIP DN2535N3-G 晶体管, MOSFET, N沟道, 120 mA, 350 V, 17 ohm, 0 V
DN2535N3-G DN2535N3-G Supertex 功能相似 TO-92-3
MICROCHIP DN2535N3-G 晶体管, MOSFET, N沟道, 120 mA, 350 V, 17 ohm, 0 V
PDF
DN2535N5 DN2535N5 Microchip 类似代替 TO-220-3
Trans MOSFET N-CH 350V 0.5A 3Pin(3+Tab) TO-220
DN2535N5-G DN2535N5-G Suptertex 功能相似
Supertex N 通道耗尽型 MOSFET 晶体管 Microchip 的 Supertex 系列 N 通道耗尽型 DMOS FET 晶体管适用于要求高击穿电压、高输入阻抗、低输入电容和切换速度快的应用。 ### 特点 高输入阻抗 低输入电容 切换速度快 低接通电阻 无次级击穿 低输入和输出泄漏 ### 典型应用 常开开关 固态继电器 转换器 线性放大器 恒定电流源 电源电路 电信 ### MOSFET 晶体管，Microchip
DN2535N5-G DN2535N5-G Microchip 功能相似 TO-220-3
Supertex N 通道耗尽型 MOSFET 晶体管 Microchip 的 Supertex 系列 N 通道耗尽型 DMOS FET 晶体管适用于要求高击穿电压、高输入阻抗、低输入电容和切换速度快的应用。 ### 特点 高输入阻抗 低输入电容 切换速度快 低接通电阻 无次级击穿 低输入和输出泄漏 ### 典型应用 常开开关 固态继电器 转换器 线性放大器 恒定电流源 电源电路 电信 ### MOSFET 晶体管，Microchip
PDF
DN2535N5-G DN2535N5-G Supertex 功能相似 TO-220
Supertex N 通道耗尽型 MOSFET 晶体管 Microchip 的 Supertex 系列 N 通道耗尽型 DMOS FET 晶体管适用于要求高击穿电压、高输入阻抗、低输入电容和切换速度快的应用。 ### 特点 高输入阻抗 低输入电容 切换速度快 低接通电阻 无次级击穿 低输入和输出泄漏 ### 典型应用 常开开关 固态继电器 转换器 线性放大器 恒定电流源 电源电路 电信 ### MOSFET 晶体管，Microchip
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