Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -600 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 350 mW
Technical parameters/gain bandwidth product: 200 MHz
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 350 mW
Technical parameters/DC current gain (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541210075
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KST2907AMTF
|
Fairchild | 完全替代 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR KST2907AMTF 单晶体管 双极, PNP, -60 V, 200 MHz, 350 mW, -600 mA, 50 hFE
|
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|
|
LGE | 功能相似 | SOT-23 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
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GMR Semiconductor | 功能相似 | SOT-23-3 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
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GUANGDONG HOTTECH INDUSTRIAL | 功能相似 | SOT-23-3 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
||
MMBT2907A
|
Diotec Semiconductor | 功能相似 | SOT-23-3 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
||
MMBT2907A
|
National Semiconductor | 功能相似 | SOT-23 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
||
MMBT2907A
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
||
MMBT2907A
|
Fairchild | 功能相似 | SOT-23-3 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
||
|
|
Kexin | 功能相似 | SOT-23 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
||
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|
Bourns J.W. Miller | 功能相似 | SOT-23-3 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
||
|
|
MDD | 功能相似 | SOT-23 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
||
|
|
Infineon | 功能相似 |
NTE ELECTRONICS MMBT2907A Bipolar (BJT) Single Transistor, PNP, -60V, 300MHz, 225mW, -600mA, 35 hFE
|
|||
MMBT2907A-7-F
|
Multicomp | 功能相似 | SOT-23 |
三极管
|
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