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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC817-40LT3G
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ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC817-40LT3G Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 40 hFE 新
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Continental Device | 功能相似 | SOT-23 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR14
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ROHM Semiconductor | 功能相似 | SOT-23 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR14
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Kexin | 功能相似 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR14
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ON Semiconductor | 功能相似 | SOT-23-3 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR16
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Philips | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BSR16.. 单晶体管 双极, PNP, -60 V, 200 MHz, 350 mW, -800 mA, 100 hFE
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SLKOR. | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
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MMBT2907
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Freescale | 类似代替 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
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MMBT2907
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CJ | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
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MMBT2907
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Motorola | 类似代替 | CASE 318-08 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
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YONGYUTAI | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
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MMBT2907
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Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
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MMBT2907A-7-F
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Multicomp | 功能相似 | SOT-23 |
三极管
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MMBT2907A_D87Z
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Fairchild | 完全替代 | SOT-23-3 |
Trans GP BJT PNP 60V 0.8A 3Pin SOT-23 T/R
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ON Semiconductor | 完全替代 | SOT-23 |
Trans GP BJT PNP 60V 0.8A 3Pin SOT-23 T/R
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