Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -800 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 350 mW
Technical parameters/DC current gain (hFE): 300
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR15
|
Philips | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BSR15 单晶体管 双极, PNP, -40 V, 200 MHz, 350 mW, -800 mA, 30 hFE
|
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Rochester | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BSR15 单晶体管 双极, PNP, -40 V, 200 MHz, 350 mW, -800 mA, 30 hFE
|
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|
|
SLKOR. | 类似代替 | SOT-23-3 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907
|
Freescale | 类似代替 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
|||
MMBT2907
|
CJ | 类似代替 | SOT-23-3 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907
|
Motorola | 类似代替 | CASE 318-08 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
|
|
YONGYUTAI | 类似代替 | SOT-23 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907
|
Fairchild | 类似代替 | SOT-23-3 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
|
|
LGE | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
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||
|
|
GMR Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
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GUANGDONG HOTTECH INDUSTRIAL | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907A
|
Diotec Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907A
|
National Semiconductor | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907A
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907A
|
Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
Kexin | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
Bourns J.W. Miller | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
MDD | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
Infineon | 类似代替 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
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