Technical parameters/frequency: 200 MHz
Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -800 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 350 mW
Technical parameters/DC current gain (hFE): 300
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.35 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541210075
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC817-40LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC817-40LT3G Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 40 hFE 新
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Continental Device | 功能相似 | SOT-23 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR14
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ROHM Semiconductor | 功能相似 | SOT-23 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR14
|
Kexin | 功能相似 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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BSR14
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
|
||
BSR16
|
Philips | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BSR16.. 单晶体管 双极, PNP, -60 V, 200 MHz, 350 mW, -800 mA, 100 hFE
|
||
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|
SLKOR. | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907
|
Freescale | 类似代替 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
|||
MMBT2907
|
CJ | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907
|
Motorola | 类似代替 | CASE 318-08 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
|
|
YONGYUTAI | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907
|
Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907. 单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907A-7-F
|
Multicomp | 功能相似 | SOT-23 |
三极管
|
||
MMBT2907A_D87Z
|
Fairchild | 完全替代 | SOT-23-3 |
Trans GP BJT PNP 60V 0.8A 3Pin SOT-23 T/R
|
||
|
|
ON Semiconductor | 完全替代 | SOT-23 |
Trans GP BJT PNP 60V 0.8A 3Pin SOT-23 T/R
|
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