Technical parameters/frequency: | 200 MHz |
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Technical parameters/rated voltage (DC): | -60.0 V |
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Technical parameters/rated current: | -600 mA |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 350 mW |
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Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/Maximum allowable collector current: | 0.6A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
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Technical parameters/maximum current amplification factor (hFE): | 300 |
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Technical parameters/rated power (Max): | 350 mW |
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Technical parameters/DC current gain (hFE): | 50 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/dissipated power (Max): | 350 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.93 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2907A-7-F
|
Multicomp | 功能相似 | SOT-23 |
三极管
|
||
MMBT2907AK
|
Fairchild | 完全替代 | SOT-23-3 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
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