Technical parameters/frequency: 300 MHz
Technical parameters/rated voltage (DC): 160 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 160 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 80 @10mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
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|---|---|---|---|---|---|---|
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2N5551
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ZSKY | 功能相似 | TO-92FE |
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先科ST | 功能相似 | TO-92-3 |
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ON Semiconductor | 功能相似 | TO-226-3 |
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Diodes | 功能相似 | TO-92-3 |
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2N5551
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UTC | 功能相似 | SOT-89 |
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2N5551RLRPG
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ON Semiconductor | 完全替代 | TO-92-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
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2N5551TA
|
Fairchild | 类似代替 | TO-226-3 |
ON Semiconductor 2N5551TA , NPN 晶体管, 600 mA, Vce=160 V, HFE:80, 100 MHz, 3引脚 TO-92封装
|
||
2N5551TFR
|
Fairchild | 完全替代 | TO-226-3 |
2N5551 系列 160 V CE 击穿 0.6 A NPN 通用 放大器 - TO-92
|
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