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Model 2N5551
Description Amplifier Transistors
Product QR code
Brand: ON Semiconductor
Packaging TO-226-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0.36  yuan 0.36yuan
20+:
$ 0.4901
50+:
$ 0.4538
100+:
$ 0.4356
300+:
$ 0.4211
500+:
$ 0.4102
1000+:
$ 0.4029
5000+:
$ 0.3957
10000+:
$ 0.3884
Quantity
20+
50+
100+
300+
500+
Price
$0.4901
$0.4538
$0.4356
$0.4211
$0.4102
Price $ 0.4901 $ 0.4538 $ 0.4356 $ 0.4211 $ 0.4102
Start batch production 20+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3332) Minimum order quantity(20)
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Technical parameters/rated voltage (DC): 160 V

Technical parameters/rated current: 600 mA

Technical parameters/number of pins: 3

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 625 mW

Technical parameters/breakdown voltage (collector emitter): 160 V

Technical parameters/minimum current amplification factor (hFE): 80 @10mA, 5V

Technical parameters/rated power (Max): 625 mW

Technical parameters/DC current gain (hFE): 80

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 625 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/packaging: TO-226-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bulk

Other/Manufacturing Applications: Signal processing, industrial, power management, portable equipment, consumer electronics products

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

Customs information/ECCN code: EAR99

Customs information/HTS code: 8541210075

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N5551 2N5551 Taitron 类似代替
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
PDF
2N5551 2N5551 ZSKY 类似代替 TO-92FE
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
PDF
2N5551 2N5551 先科ST 类似代替 TO-92-3
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
PDF
2N5551 2N5551 ON Semiconductor 类似代替 TO-226-3
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
PDF
2N5551 2N5551 Fairchild 类似代替 TO-92-3
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
PDF
2N5551 2N5551 Boca Semiconductor 类似代替
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
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2N5551 2N5551 Micro Commercial Components 类似代替 TO-92
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
PDF
2N5551 2N5551 Central Semiconductor 类似代替 TO-226-3
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
PDF
2N5551 2N5551 Diodes 类似代替 TO-92-3
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
PDF
2N5551 2N5551 UTC 类似代替 SOT-89
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
PDF
2N5551G 2N5551G ON Semiconductor 功能相似 TO-92-3
ON SEMICONDUCTOR 2N5551G 单晶体管 双极, 通用, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 100 hFE
PDF
2N5551RLRAG 2N5551RLRAG ON Semiconductor 功能相似 TO-92-3
ON SEMICONDUCTOR 2N5551RLRAG 双极性晶体管
PDF
2N5551TA 2N5551TA Fairchild 功能相似 TO-226-3
FAIRCHILD SEMICONDUCTOR 2N5551TA 单晶体管 双极, NPN, 160 V, 100 MHz, 625 mW, 600 mA, 30 hFE
PDF
2N5551TAR 2N5551TAR ON Semiconductor 完全替代
Trans GP BJT NPN 160V 0.6A 3Pin TO-92 Ammo
PDF
2N5551TF 2N5551TF Fairchild 功能相似 TO-92-3
小信号 NPN 晶体管，高于 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
PDF
2N5551TF 2N5551TF ON Semiconductor 功能相似 TO-92-3
小信号 NPN 晶体管，高于 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
PDF

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