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Model 2N5551TA

Description FAIRCHILD SEMICONDUCTOR 2N5551TA Single transistor bipolar, NPN, 160 V, 100 MHz, 625 mW, 600 mA, 30 hFE

Brand: Fairchild

Packaging TO-226-3

Delivery time

Packaging method Tape

Standard packaging quantity 1

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Technical parameters/frequency:	300 MHz
Technical parameters/rated voltage (DC):	160 V
Technical parameters/rated current:	600 mA
Technical parameters/number of pins:	3
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	625 mW
Technical parameters/breakdown voltage (collector emitter):	160 V
Technical parameters/Maximum allowable collector current:	0.6A
Technical parameters/minimum current amplification factor (hFE):	80 @10mA, 5V
Technical parameters/rated power (Max):	625 mW
Technical parameters/DC current gain (hFE):	30
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	625 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-226-3
Dimensions/Length:	5.2 mm
Dimensions/Width:	4.19 mm
Dimensions/Height:	5.33 mm
Dimensions/Packaging:	TO-226-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99

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