Technical parameters/frequency: 300 MHz
Technical parameters/rated voltage (DC): 160 V
Technical parameters/rated current: 600 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 160 V
Technical parameters/thermal resistance: 83.3℃/W (RθJC)
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 80 @10mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Audio, Audio
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5551RLRA
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
2N5551RLRA
|
DAYA | 完全替代 |
放大器晶体管 Amplifier Transistors
|
|||
2N5551RLRMG
|
ON Semiconductor | 完全替代 | TO-226-3 |
TO-92 NPN 160V 0.6A
|
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