Technical parameters/frequency: 300 MHz
Technical parameters/rated voltage (DC): 160 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 160 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 80 @10mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5551RLRPG
|
ON Semiconductor | 类似代替 | TO-92-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
|
||
2N5551TA
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N5551TA 单晶体管 双极, NPN, 160 V, 100 MHz, 625 mW, 600 mA, 30 hFE
|
||
2N5551TF
|
Fairchild | 完全替代 | TO-92-3 |
NPN 晶体管，高于 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N5551TF
|
ON Semiconductor | 完全替代 | TO-92-3 |
NPN 晶体管，高于 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review