Technical parameters/frequency: 40 MHz
Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: -8.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 20 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/minimum current amplification factor (hFE): 40 @4A, 1V
Technical parameters/rated power (Max): 1.75 W
Technical parameters/DC current gain (hFE): 60
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 20 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.1 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH45H11TF
|
Fairchild | 类似代替 | TO-252-3 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2Pin, DPAK-3
|
||
MJD45H11G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD45H11G 单晶体管 双极, 音频, PNP, 80 V, 90 MHz, 20 W, 8 A, 60 hFE
|
||
MJD45H11T4
|
ON Semiconductor | 完全替代 | DPAK-252 |
互补功率晶体管 Complementary Power Transistors
|
||
MJD45H11T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
PNP 功率晶体管，ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。
|
||
MJD45H11TF
|
ON Semiconductor | 类似代替 | TO-252-3 |
Power PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
MJD45H11TF
|
Fairchild | 类似代替 | TO-252-3 |
Power PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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