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Model MJD45H11TF

Description ON Semiconductor MJD45H11TF , PNP Transistor, 8 A, Vce=80 V, HFE: 40, 1 MHz, 3-pin DPAK (TO-252) package

Brand: ON Semiconductor

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	40 MHz
Technical parameters/number of pins:	3
Technical parameters/dissipated power:	1.75 W
Technical parameters/breakdown voltage (collector emitter):	80 V
Technical parameters/minimum current amplification factor (hFE):	40
Technical parameters/rated power (Max):	1.75 W
Technical parameters/DC current gain (hFE):	60
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1750 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.6 mm
Dimensions/Width:	6.1 mm
Dimensions/Height:	2.3 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Industrial, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

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