Technical parameters/rated voltage (DC): | -80.0 V |
|
Technical parameters/rated current: | -8.00 A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1750 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | DPAK-252 |
|
Dimensions/Packaging: | DPAK-252 |
|
Physical parameters/materials: | Silicon |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD45H11G
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON SEMICONDUCTOR MJD45H11G 单晶体管 双极, 音频, PNP, 80 V, 90 MHz, 20 W, 8 A, 60 hFE
|
||
MJD45H11RLG
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON SEMICONDUCTOR MJD45H11RLG 单晶体管 双极, 通用, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE
|
||
MJD45H11TF
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON Semiconductor MJD45H11TF , PNP 晶体管, 8 A, Vce=80 V, HFE:40, 1 MHz, 3引脚 DPAK (TO-252)封装
|
||
MJD45H11TF
|
Fairchild | 完全替代 | TO-252-3 |
ON Semiconductor MJD45H11TF , PNP 晶体管, 8 A, Vce=80 V, HFE:40, 1 MHz, 3引脚 DPAK (TO-252)封装
|
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