Technical parameters/frequency: | 40 MHz |
|
Technical parameters/rated voltage (DC): | -80.0 V |
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Technical parameters/rated current: | -8.00 A |
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Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 1.75 W |
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Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/Maximum allowable collector current: | 8A |
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Technical parameters/minimum current amplification factor (hFE): | 40 @4A, 1V |
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Technical parameters/rated power (Max): | 1.75 W |
|
Technical parameters/dissipated power (Max): | 1750 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Width: | 6.1 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD45H11TF
|
ON Semiconductor | 类似代替 | TO-252-3 |
Power PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
MJD45H11TF
|
Fairchild | 类似代替 | TO-252-3 |
Power PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
MJD45H11TM
|
ON Semiconductor | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR MJD45H11TM 单晶体管 双极, PNP, -80 V, 40 MHz, 1.75 W, -8 A, 40 hFE
|
||
MJD45H11TM
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR MJD45H11TM 单晶体管 双极, PNP, -80 V, 40 MHz, 1.75 W, -8 A, 40 hFE
|
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