Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 7.10 A
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.03 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 1.6 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 7.20 A
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 720pF @15V(Vds)
Technical parameters/rated power (Max): 1.1 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 3 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 类似代替 | SOT-223-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
|
|
National Semiconductor | 类似代替 | SOT-223-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
NDT451AN
|
ON Semiconductor | 类似代替 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
NDT451AN
|
Fairchild | 类似代替 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
|
|
Fairchild | 功能相似 | SOT-223 |
N-Channel Enhancement Mode Field Effect Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review