Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 7.2A |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 功能相似 | SOT-223-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
|
|
National Semiconductor | 功能相似 | SOT-223-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
NDT451AN
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
NDT451AN
|
Fairchild | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review